RIE-8

STS ICP RIE

Nanofabrication Facility

MAKE

Surface Technology Systems

MODEL

LOCATION

Cleanroom G07 LISE

Equipment:
STS RIE – 8 is an Inductively Coupled Plasma etching system and characterized with high plasma density, low operating pressure, high etch rate, excellent etch uniformity, and low energy ion damage. Major features include:

Applications:
Etching silicon-based materials, boron nitride, and other compatible 2-D materials.

Features:

路 ICP power up to 1,500 W

路 RF bias up to 300 W

路 Available gases: SF6, C4F8, CHF3, CF4, H2, Cl2, HBr, BCl3, Ar, O2, and N2

路 Substrate temperatures from 10 掳C to 30 掳C

路 Handling 6鈥 or smaller samples

Available Processes:

路 High aspect ratio Si pillars

路 Si nano-wires and nano-needles

路 Si micro holes

路 Si trenches

路 SiO2 and Si3N4 trenches

路 Graphene and boron nitride etch

 

Please contact Ling Xie for training information.

Dr. Ling Xie

617-496-9069

lxie@cns.fas.harvard.edu

primary contact

Kenlin Huang

617-495-1738

kenlinhuang@cns.fas.harvard.edu

Logins

doubleArrow-right