DOE-1

ULVAC Deep Oxide Etcher

Nanofabrication Facility

MAKE

ULVAC

MODEL

NLD-570

LOCATION

Cleanroom G07 LISE

The ULVAC NLD-570 etch system is designed with low process pressure, high density plasma, low electron temperature which are perfect for the etch applications of deep oxide, LiNbO3, TiO2, quartz, glass, and Pyrex etc. NLD plasma operates in a regime optimal for deep glass and quartz etching with low pressure to eliminate “grass” or “needles” at the bottom of features and with high density to enhance etch rate for deep etching. This tool utilizes Controllable Neutral Loop for optimal etch uniformity. The chiller temperature can be adjusted from -20°C to 40°C.

Applications:
The ULVAC NLD-570 tool will be restricted to etch SiO2, TiO2, quartz, glass and LiNbO3 at this moment.

Features:
-Neutral Loop Discharge high-density plasma system
-Fully integrated load lock with automatic wafer transport system
-ICP assembly upper electrode powered up to 3,000 W
-RF biased lower electrode powered up to 1,000 W and chilled from 40°C to -20°C.
-Single wafer loadlock for 6” wafer
-Available gases: C3F8, C4F8, CHF3, CF4, O2, Ar, Cl2, and N2
-Internet remote control capability

Processes:
In general, the etch processes demonstrated vertical profile, high etch rate, good selectivity to metal mask materials, smooth sidewall and clean etched surface.

Please contact Kenlin Huang for training and additional information.

Kenlin Huang

617-495-1738

kenlinhuang@cns.fas.harvard.edu

primary contact

David LaFleur

617-384-5024

dlafleur@cns.fas.harvard.edu

Dr. Ling Xie

617-496-9069

lxie@cns.fas.harvard.edu

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