Equipment description and usage: The Raith 150 is an ultra-high resolution electron beam lithography system used for writing complex patterns in resists at resolutions of 50 nm for direct-write lithographic applications. The system also has a Scanning Electron Microscope to facilitate imaging and navigation of the sample. Detailed specifications include: Nanolithography: * Direct write, wafer process development at sub-optical resolutions * Filament type: Schottky Thermal Field Emission * Selectable beam energy 200 V - 30 kV * Probe current: 4 pA- 10nA * Writing field: 1 micron - 800 micron * Exposure step size: Write field/ 65536 * Resolution (PMMA <100 nm thick): 50 nm lines and 50 nm spaces * Alignment accuracy (<100 um field): 60 nm * Field stitching and mix and match accuracy: 60 nm (100 um fields). * Writing speed: 10 MHz * Sample handling: full 6"" mask and wafer Metrology: * SEM inspection and sample navigation * Image resolution: 2.0 nm @ 20 kV 4.0 nm @ 1 kV.

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