Equipment Description and Usage: The SP-2 has a turbo-pumped main chamber that reaches a vacuum in the low 10^-8 Torr range and a turbo-pumped load lock chamber for fast pump-down times. Six shuttered magnetron guns containing two inch diameter targets. Three DC guns for deposition of conductive materials and three RF guns for deposition of non-conductive materials. Argon flow and chamber pressure control for optimizing deposition conditions. N₂ and O₂ Mass Flow Controlled gas lines for reactive sputtering. Heated substrate holder that maintains temperature control up to 800^oC before, during and/or after deposition. Substrate holder can be rotated and accommodates substrates up to 4"" in diameter. Substrate bias for plasma assisted substrate pre-cleaning or plasma assisted deposition. Applications: Sputter deposition of metal, semiconductor, and/or dielectric thin films onto pieces of substrates or whole substrates up to 4"" diameter. Depositions can be single thin films or multilayered with up to six different films. Shuttered magnetron guns maintain sharp interfaces between thin films. Targets Available for Use: Ag, Al, Au, Cr, Cu, Ge, Mo, Nb, Ni, NiFe, Pd, Pt, Si, Ti, W, Al₂O₃, ITO, Si₃N₄, SiO₂, TiO₂, TiN, ZnO, CaF₂, MgF₂

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