RIE-8
STS ICP RIE
Nanofabrication Facility
MAKE
Surface Technology Systems
MODEL
LOCATION
LISE Cleanroom G07
Equipment: STS RIE - 8 is an Inductively Coupled Plasma etching system and characterized with high plasma density, low operating pressure, high etch rate, excellent etch uniformity, and low energy ion damage. Major features include: Applications: Etching silicon-based materials, boron nitride, and other compatible 2-D materials. Features: 脙聜脗路 ICP power up to 1,500 W 脙聜脗路 RF bias up to 300 W 脙聜脗路 Available gases: SF6, C4F8, CHF3, CF4, H2, Cl2, HBr, BCl3, Ar, O2, and N2 脙聜脗路 Substrate temperatures from 10 脙聜脗掳C to 30 脙聜脗掳C 脙聜脗路 Handling 6脙垄芒聜卢脗鲁 or smaller samples Available Processes: 脙聜脗路 High aspect ratio Si pillars 脙聜脗路 Si nano-wires and nano-needles 脙聜脗路 Si micro holes 脙聜脗路 Si trenches 脙聜脗路 SiO2 and Si3N4 trenches 脙聜脗路 Graphene and boron nitride etch
Click here to view this tool in the CNS virtual reality model.
Please contact listed primary contact for training information. Please refer to the Nanofabrication Facility Use tab of the User Info section of the CNS website for the nanofab training flowchart.
Ling Xie
lxie@cns.fas.harvard.edu
primary contact