The SP-3 has a turbo-pumped chamber that reaches a vacuum in the 10^-7 Torr range with a pump-down time of ~1 hour. Three shuttered magnetron guns each contain 2"" diameter targets. Two DC guns for deposition of conductive materials and one RF gun for deposition of conductive or non-conductive materials. Argon flow and chamber pressure control for optimizing deposition conditions. O₂ mass flow controlled process gas for reactive sputtering. Heated rotating substrate holder that maintains temperature control up to 800^oC for manipulation of film crystal structure, and accommodates substrates up to 4"" in diameter. Applications: Sputter deposition of metal, semiconductor, and/or dielectric thin films onto pieces of substrates or whole substrates up to 4"" diameter. The SP-3's configuration affords good sidewall coverage of features for insulation/isolation. Depositions can be single thin films or multilayered with up to three different films in one pump-down. Shuttered magnetron guns maintain sharp interfaces between thin films. Some Targets Available for Use: Ag, Al, Cr, Cu, Ge, Mo, Nb, Pd, Si, Ti, Al₂O₃, ITO, SiO₂, TiO₂, ZnO

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