SPTS Rapier DRIE (RIE-10) SPTS RIE-10, a state-of-the-art deep silicon etching system, is furnished with dual plasma sources and dual gas inlets. The tool is characterized with high etch rate 6-10 µm/min; high aspect ratio 50:1; good selectivity > 50:1 to resist and >100:1 to silicon oxide; and a good uniformity < 5% cross 6” wafers. Its fixed RF matching technology reduces the step-process time to 1 second, which leads to a controllable side wall roughness < 6nm for nanoscale features. Major features include: · Primary rf power up to 3,000W · Secondary rf power up to 3,000W · Substrate power up to 300W · Chuck temperatures from -15°C to +40°C · Handling 6″ or smaller samples · Claritas End Point Detector Applications · Si etch only · High aspect ratio etch: 5 – 50 · Deep etch: 5µm – through Si wafer etch · Broad feature sizes: from nano- to mm- scales in lateral dimension · Side wall roughness (scallop depth): 6nm – 700nm · Only resists and SiO2 or Si3N4 allowed as etching mask · Handling 6″ or smaller samples · Absolutely no-metal mask or metal stop layers Available Processes · Micro Pillars · Nano Pillars · Micro Trenches · Nano Trenches · Via etch · Through wafer via etch · Wafer thinning

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