The Savannah ALD (Atomic Layer Deposition) from Cambridge NanoTech is a low- to mid-temperature (100-250 ℃) deposition system that uses surface adsorbtion of single mono-layers of reactive precursor gases to form single atomic monolayers of a variety of insulating and conductive layers, with good uniformity, almost perfect conformality, and minimal heating of substrates. Deposition rates are typically rather slow, in the range of 3-6 Å per minute, but extremely high-aspect-ratio fill (20:1) is easily achievable. The process involves releasing alternating gas pulses of reactive metal-bearing organic precursors and oxidizing secondary precursors such as water, O₂, or O₃. Available deposition materials are Al₂O₃ (aluminum oxide) and HfO₂ (hafnium oxide), TiO₂ (titanium dioxide), ZnO (zinc oxide), all using water as the secondary precursor. ZrO and other materials are being explored.

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