The Cobra® ICP etch sources produce a high density of reactive species at low pressure. Substrate DC bias is independently controlled by an RF generator, allowing control of ion energy according to process requirements. Process chambers are available as standalone modules with load locks for 6” wafer with flat. The electrode temperature can be adjusted from -100 C to 300 C. Applications: The Oxford PlasmaPro 100 Cobra 300 tool will be restricted to etch metals, metal oxides, metal nitrides, silicides, tellurides, selenides, MRAM alloys, 2D materials, polyimide and LiNbO3 at this moment. The other etch applications such as SiO2, Si, SiN, III-V compound, diamond, deep Si and deep SiO2 will be prohibited. Features: -Delivers reactive species to the substrate, with a uniform high conductance path through the chamber, allowing a high gas flow to be used while maintaining low pressure. -Electrodes available for temperatures from -100ºC to +300ºC with helium backside cooling and a range mechanical clamp designs. -Optimised hardware and control to deliver processes requiring fast process step switching. -13.56 MHz driven substrate electrode. -High conductance vacuum layout. -In-situ chamber cleaning. -High pumping capacity gives wide process pressure window. -Solid state RF generators and close coupled matching networks ensures fast, consistent plasma matching. -Single wafer loadlock for 6” wafer with major flat. -Available gases: CHF3, CF4, O2, Ar, Cl2,CH4,H2 and N2. Processes: In general, the etch processes demonstrated vertical profile, high etch rate, good selectivity to metal mask materials, smooth sidewall and clean etched surface.

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