The ICP based plasma CVD source produces a high density (more than standard parallel plate RF sources) of reactive species at low pressure. Substrate DC bias is also independently controlled by an RF generator. The process chamber is a stand alone module with an attached load lock for 6” wafers. Small samples can  be placed on a 6” wafer as a carrier. The sample temperature can be adjusted from 20℃ to 300℃ but is generally 80℃ for SiO₂ and Si₃N₄ and 200℃ for a:Si.

Applications:

The Oxford PlasmaPro 100 ICPCVD tool can be used to grow SiO₂, Si₃N₄ (low stress), and a:Si (undoped).  There are no sample restrictions (just no liquids/pastes). The tool is ideal for growth on photoresist or other polymers, but will also provide high quality materials on standard susbtrates like Si, GaN, glass etc.

Features:

- Delivers reactive species to the substrate, with a uniform high conductance path through the chamber, allowing a high gas flow to be used while maintaining low pressure.

- Temperatures from 20℃ to 300℃ with helium backside cooling.

- Optimized hardware and control to create fast multistep recipes and low recipe overhead times.

- 13.56 MHz driven substrate electrode.

- High conductance vacuum layout (deposition pressures <100mtorr)

- In-situ chamber cleaning.

- Solid state RF generators and close coupled matching networks ensures fast, consistent plasma matching.

- Single wafer load-lock for 6” wafer with major flat.

- Available films:  SiO₂, SiNx, a:Si

Click here to view this tool in the CNS virtual reality model.